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| SEMICONDUCTOR TECHNICAL DATA FEATURES Low Collector Saturation Voltage. : VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) Large Collector Current : IC=-10A(dc) IC=-15A(10ms, single pulse) Complementary to KTC5001D/L. Q A C KTA1834D/L EPITAXIAL PLANAR PNP TRANSISTOR I J H P F F 2 3 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -30 -20 -6 -10 -15 -2 1.0 10 150 Q UNIT V V V A A W 1 DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M D 1. BASE 2. COLLECTOR 3. EMITTER DPAK A C I J D O -55 150 H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 0.2 1.10 + _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX K 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification GR:180~390. SYMBOL ICBO IEBO BVCBO BVCEO BVEBO hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob VCB=-20V VEB=-5V IC=-50 A IC=-1mA IE=-50 A VCE=-2V, IC=-0.5A VCE=-2V, IC=-4.0A IC=-4.0A, IB=-0.05A IC=-4A, IB=-0.05A VCE=-5V, IE=1.5A, f=50MHz VCB=-10V, IE=0, f=1MHz TEST CONDITION MIN. -30 -20 -6 180 82 - IPAK TYP. - MAX. -10 -10 UNIT A A V V V -0.16 -0.9 150 220 390 -0.25 -1.2 V V MHz pF 2003. 3. 27 Revision No : 5 1/3 KTA1834D/L I C - V BE -10 COLLECTOR CURRENT I C (A) V CE =-2V h FE - I C 1k DC CURRENT GAIN h FE 500 300 VCE =-5V Ta=25 C -1 Ta= 150 C 5C Ta=-5 5C -0.1 Ta = 2 -0.01 100 50 VCE =-2V V CE =-1V -0.001 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 30 -0.01 -0.1 -1 -10 -20 COLLECTOR EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT IC (A) h FE - I C 2K 1K 500 300 Ta=150 C Ta=25 C Ta=-55 C VCE(sat) - I C -1K COLLECTOR SATURATION VOLTAGE VCE(sat) (mV) V CE =-2V Ta=25 C DC CURRENT GAIN h FE -300 -100 -30 -10 -3 -0.01 I C /I B =80 40 20 100 50 30 -0.01 -0.1 -1 -10 -20 -0.03 -0.1 -0.3 -1 -3 -10 -20 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VCE(sat) - I C -1K COLLECTOR SATURATION VOLTAGE VCE(sat) (V) -300 -100 -30 -10 -3 -0.01 Ta=-55 C Ta=25 C Ta=150 C I C /I B =80 VBE(sat) - I C -1K BASE SATURATION VOLTAGE VBE(sat) (mV) -300 -100 -30 -10 -3 -0.01 Ta=-55 C Ta=25 C Ta=150 C I C /I B =80 -0.1 -1 -10 -20 -0.1 -1 -10 -20 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 5 2/3 KTA1834D/L fT - IE 500 300 Ta=25 C V CE =-5V f=50MHz C ob - VCE COLLECTOR OUTPUT CAPACITANCE C ob (pF) 3K Ta=25 C f=1MHz I E =0A TRANSITION FREQUENCY f T (MHz) 1k 1K 500 300 100 50 30 100 50 -0.1 -0.3 -1 -3 -10 -30 -100 10 0.01 0.03 0.1 0.3 1 3 10 EMITTER CURRENT I E (A) COLLECTOR-BASE VOLTAGE V CE (V) C ib - VEB EMITTER INPUT CAPACITANCE C ib (pF) 10K 5K 3K 30 COLLECTOR CURRENT IC (A) Ta=25 C f=1MHz I C =0A SAFE OPERATING AREA I C MAX(PULSE) * 10 3 1 0.3 0.1 0.03 0.01 0.01 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE DC * mS 10 S* 0m 10 OP ER 1K 500 300 AT IO N Ta =2 5 C 100 -0.05 -0.1 -0.3 -1 -3 -10 BASE-EMITTER VOLTAGE V EB (V) 0.03 0.1 0.3 1 3 10 30 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION Pc (W) Pc - Ta 12 10 8 6 4 2 0 2 1 1 Tc=25 C 2 Ta=25 C 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 5 3/3 |
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